FDD390N15ALZ Todos los transistores

 

FDD390N15ALZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD390N15ALZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.3 nS

Cossⓘ - Capacitancia de salida: 93 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: TO252 DPAK

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FDD390N15ALZ datasheet

 ..1. Size:1003K  fairchild semi
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FDD390N15ALZ

January 2014 FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 m Features Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A lored to minimize the on-state resistance while maintain

 ..2. Size:1107K  onsemi
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FDD390N15ALZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 3.1. Size:816K  cn vbsemi
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FDD390N15ALZ

FDD390N15AL www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS

 4.1. Size:624K  fairchild semi
fdd390n15a.pdf pdf_icon

FDD390N15ALZ

October 2011 FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40m Features Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performanc

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