FDD390N15ALZ Todos los transistores

 

FDD390N15ALZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD390N15ALZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.3 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD390N15ALZ Datasheet (PDF)

 ..1. Size:1003K  fairchild semi
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FDD390N15ALZ

January 2014FDD390N15ALZN-Channel PowerTrench MOSFET150 V, 26 A, 42 mFeatures Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 Alored to minimize the on-state resistance while maintain

 ..2. Size:1107K  onsemi
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FDD390N15ALZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 3.1. Size:816K  cn vbsemi
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FDD390N15ALZ

FDD390N15ALwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

 4.1. Size:624K  fairchild semi
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FDD390N15ALZ

October 2011FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mFeatures Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performanc

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History: AOCA32112E | FQA13N80-F109 | HFU630

 

 
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