All MOSFET. FDD390N15ALZ Datasheet

 

FDD390N15ALZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD390N15ALZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   trⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO252 DPAK

 FDD390N15ALZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD390N15ALZ Datasheet (PDF)

 ..1. Size:1003K  fairchild semi
fdd390n15alz.pdf

FDD390N15ALZ
FDD390N15ALZ

January 2014FDD390N15ALZN-Channel PowerTrench MOSFET150 V, 26 A, 42 mFeatures Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 Alored to minimize the on-state resistance while maintain

 ..2. Size:1107K  onsemi
fdd390n15alz.pdf

FDD390N15ALZ
FDD390N15ALZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 3.1. Size:816K  cn vbsemi
fdd390n15al.pdf

FDD390N15ALZ
FDD390N15ALZ

FDD390N15ALwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

 4.1. Size:624K  fairchild semi
fdd390n15a.pdf

FDD390N15ALZ
FDD390N15ALZ

October 2011FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mFeatures Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performanc

 4.2. Size:487K  onsemi
fdd390n15a.pdf

FDD390N15ALZ
FDD390N15ALZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.3. Size:307K  inchange semiconductor
fdd390n15a.pdf

FDD390N15ALZ
FDD390N15ALZ

isc N-Channel MOSFET Transistor FDD390N15AFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTA110N055T7

 

 
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