FDD390N15ALZ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDD390N15ALZ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 9.3 ns
Cossⓘ - Выходная емкость: 93 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: TO252 DPAK
- подбор MOSFET транзистора по параметрам
FDD390N15ALZ Datasheet (PDF)
fdd390n15alz.pdf

January 2014FDD390N15ALZN-Channel PowerTrench MOSFET150 V, 26 A, 42 mFeatures Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 Alored to minimize the on-state resistance while maintain
fdd390n15alz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd390n15al.pdf

FDD390N15ALwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS
fdd390n15a.pdf

October 2011FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mFeatures Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performanc
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PQ5G4JN | IMW120R220M1H | FS18SM-14A | AP10N4R5P | HITK0303MP | AONS660A60 | 2SK417
History: PQ5G4JN | IMW120R220M1H | FS18SM-14A | AP10N4R5P | HITK0303MP | AONS660A60 | 2SK417



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2n5496 | 2sb600 | 2sa1209 | 2sc1364 replacement | 2sd665 | 7506 mosfet datasheet | 2sb1186a | a1695 datasheet