FDD390N15ALZ. Аналоги и основные параметры
Наименование производителя: FDD390N15ALZ
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9.3 ns
Cossⓘ - Выходная емкость: 93 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Аналог (замена) для FDD390N15ALZ
- подборⓘ MOSFET транзистора по параметрам
FDD390N15ALZ даташит
fdd390n15alz.pdf
January 2014 FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 m Features Description RDS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A lored to minimize the on-state resistance while maintain
fdd390n15alz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd390n15al.pdf
FDD390N15AL www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS
fdd390n15a.pdf
October 2011 FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40m Features Description RDS(on) = 33.5m ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performanc
Другие MOSFET... FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , IRFZ46N , FDMA7628 , FDMC86248 , FDPC8013S , FDP039N08B , FDME820NZT , FDS86540 , FDPF18N20FTG , HUF76633P3F085 .
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