FDMQ86530L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMQ86530L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 299 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: MLP4.5X5

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FDMQ86530L Datasheet (PDF)

..1. Size:220K fairchild semi
fdmq86530l.pdf

April 2013FDMQ86530LGreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 mFeatures General DescriptionThis Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 Apower dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

..2. Size:331K onsemi
fdmq86530l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:266K fairchild semi
fdmq8403.pdf

July 2012FDMQ8403GreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 100 V, 6 A, 110 mFeatures General DescriptionThis quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 Apower dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

9.2. Size:372K fairchild semi
fdmq8203.pdf

December 2011FDMQ8203GreenBridgeTM Series of High-Efficiency Bridge RectifiersDual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m P-Channel: -80 V, -6 A, 190 mFeatures General DescriptionQ1/Q4: N-ChannelThis quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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