FDMQ86530L Todos los transistores

 

FDMQ86530L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMQ86530L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 299 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: MLP4.5X5
 

 Búsqueda de reemplazo de FDMQ86530L MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: FDMQ86530L

 ..1. Size:220K  fairchild semi
 fdmq86530l.pdf pdf_icon

FDMQ86530L

April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 m Features General Description This Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 A power dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

 ..2. Size:331K  onsemi
 fdmq86530l.pdf pdf_icon

FDMQ86530L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:266K  fairchild semi
 fdmq8403.pdf pdf_icon

FDMQ86530L

July 2012 FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 m Features General Description This quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

 9.2. Size:372K  fairchild semi
 fdmq8203.pdf pdf_icon

FDMQ86530L

December 2011 FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel 100 V, 6 A, 110 m P-Channel -80 V, -6 A, 190 m Features General Description Q1/Q4 N-Channel This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

MOSTRAR MÁS

Otros transistores... FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , 20N60 , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z .

 

 
Back to Top

 


 
.