All MOSFET. FDMQ86530L Datasheet

 

FDMQ86530L Datasheet and Replacement


   Type Designator: FDMQ86530L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 299 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: MLP4.5X5
 

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FDMQ86530L Datasheet (PDF)

 ..1. Size:220K  fairchild semi
fdmq86530l.pdf pdf_icon

FDMQ86530L

April 2013FDMQ86530LGreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 mFeatures General DescriptionThis Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 Apower dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

 ..2. Size:331K  onsemi
fdmq86530l.pdf pdf_icon

FDMQ86530L

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:266K  fairchild semi
fdmq8403.pdf pdf_icon

FDMQ86530L

July 2012FDMQ8403GreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 100 V, 6 A, 110 mFeatures General DescriptionThis quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 Apower dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

 9.2. Size:372K  fairchild semi
fdmq8203.pdf pdf_icon

FDMQ86530L

December 2011FDMQ8203GreenBridgeTM Series of High-Efficiency Bridge RectifiersDual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m P-Channel: -80 V, -6 A, 190 mFeatures General DescriptionQ1/Q4: N-ChannelThis quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

Datasheet: FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , 20N60 , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z .

History: IPD65R650CE

Keywords - FDMQ86530L MOSFET datasheet

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