FDMQ86530L Specs and Replacement
Type Designator: FDMQ86530L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 299 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: MLP4.5X5
FDMQ86530L substitution
- MOSFET ⓘ Cross-Reference Search
FDMQ86530L datasheet
fdmq86530l.pdf
April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 m Features General Description This Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 A power dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5 ... See More ⇒
fdmq86530l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdmq8403.pdf
July 2012 FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 m Features General Description This quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD... See More ⇒
fdmq8203.pdf
December 2011 FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel 100 V, 6 A, 110 m P-Channel -80 V, -6 A, 190 m Features General Description Q1/Q4 N-Channel This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3... See More ⇒
Detailed specifications: FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , 20N60 , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z .
History: APQ12SN60A
Keywords - FDMQ86530L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APQ12SN60A
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