FDMQ86530L - описание и поиск аналогов

 

FDMQ86530L. Аналоги и основные параметры

Наименование производителя: FDMQ86530L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.9 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.8 ns

Cossⓘ - Выходная емкость: 299 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0175 Ohm

Тип корпуса: MLP4.5X5

Аналог (замена) для FDMQ86530L

- подборⓘ MOSFET транзистора по параметрам

 

FDMQ86530L даташит

 ..1. Size:220K  fairchild semi
fdmq86530l.pdfpdf_icon

FDMQ86530L

April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 m Features General Description This Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 A power dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

 ..2. Size:331K  onsemi
fdmq86530l.pdfpdf_icon

FDMQ86530L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:266K  fairchild semi
fdmq8403.pdfpdf_icon

FDMQ86530L

July 2012 FDMQ8403 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench MOSFET 100 V, 6 A, 110 m Features General Description This quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 A power dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

 9.2. Size:372K  fairchild semi
fdmq8203.pdfpdf_icon

FDMQ86530L

December 2011 FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel 100 V, 6 A, 110 m P-Channel -80 V, -6 A, 190 m Features General Description Q1/Q4 N-Channel This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

Другие MOSFET... FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , 20N60 , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z .

 

 

 

 

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