FDB035AN06_F085 Todos los transistores

 

FDB035AN06_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB035AN06_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 310 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 95 nC

Resistencia drenaje-fuente RDS(on): 0.0035 Ohm

Empaquetado / Estuche: TO263, D2PAK

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FDB035AN06_F085 Datasheet (PDF)

1.1. fdb035an06a0.pdf Size:236K _fairchild_semi

FDB035AN06_F085
FDB035AN06_F085

July 2002 FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m? Features Applications rDS(ON) = 3.2m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS

1.2. fdb035an06 f085.pdf Size:281K _fairchild_semi

FDB035AN06_F085
FDB035AN06_F085

January 2012 FDB035AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features Applications • rDS(ON) = 3.2mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low Qrr Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • D

 1.3. fdb035an06a0.pdf Size:205K _inchange_semiconductor

FDB035AN06_F085
FDB035AN06_F085

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDB035AN06A0 ·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High speed switching ·Low miller charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages, hard switching PWM stages and resonant swit

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