FDB035AN06F085 - аналоги, параметры транзистора

FDB035AN06F085 даташит

4.1. Size:236K fairchild semi
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July 2002 FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Features Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

4.2. Size:281K fairchild semi
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January 2012 FDB035AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 80A, 3.5m Features Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) D

4.3. Size:948K onsemi
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FDB035AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Features Applications RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 95 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capabil

4.4. Size:205K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDB035AN06A0 FEATURES With TO-263(D2PAK) packaging Single pulse and repetitive pulse High speed switching Low miller charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant swit

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