All MOSFET. FDB035AN06F085 Datasheet

 

FDB035AN06F085 Datasheet and Replacement


   Type Designator: FDB035AN06F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 95 nC
   tr ⓘ - Rise Time: 93 nS
   Cossⓘ - Output Capacitance: 1123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO263 D2PAK
 

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FDB035AN06F085 Datasheet (PDF)

 4.1. Size:236K  fairchild semi
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FDB035AN06F085

July 2002FDB035AN06A0 N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC co

 4.2. Size:281K  fairchild semi
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FDB035AN06F085

January 2012FDB035AN06A0_F085N-Channel PowerTrench MOSFET60V, 80A, 3.5mFeatures Applications rDS(ON) = 3.2m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) D

 4.3. Size:948K  onsemi
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FDB035AN06F085

FDB035AN06A0N-Channel PowerTrench MOSFET60 V, 80 A, 3.5 mFeaturesApplications RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 80 A QG(tot) = 95 nC ( Typ.) @ VGS = 10 V Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Low Miller Charge Motor drives and Uninterruptible Power Supplies Low Qrr Body Diode UIS Capabil

 4.4. Size:205K  inchange semiconductor
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FDB035AN06F085

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDB035AN06A0FEATURESWith TO-263(D2PAK) packagingSingle pulse and repetitive pulseHigh speed switchingLow miller chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant swit

Datasheet: FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , FDMQ86530L , IRF540 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ .

History: FDB0190N807L | FDB86363F085 | SML30J130F | FDB8876 | FDB9506L-F085

Keywords - FDB035AN06F085 MOSFET datasheet

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