FDMS86200DC Todos los transistores

 

FDMS86200DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86200DC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 28 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.017 Ohm

Empaquetado / Estuche: PQFN5X6

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FDMS86200DC Datasheet (PDF)

1.1. fdms86200dc.pdf Size:372K _fairchild_semi

FDMS86200DC
FDMS86200DC

December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench® MOSFET 150 V, 40 A, 17 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =

1.2. fdms86200.pdf Size:211K _fairchild_semi

FDMS86200DC
FDMS86200DC

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance and

 2.1. fdms86202et120.pdf Size:314K _upd-mosfet

FDMS86200DC
FDMS86200DC

January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 102 A, 7.2 mΩ Features Extended TJ rating to 175°C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p

2.2. fdms86201.pdf Size:216K _fairchild_semi

FDMS86200DC
FDMS86200DC

Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state resistan

 2.3. fdms86202.pdf Size:341K _fairchild_semi

FDMS86200DC
FDMS86200DC

July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s

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