FDMS86200DC - описание и поиск аналогов

December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =

MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur