FDMS86200DC Datasheet and Replacement

December 2013FDMS86200DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) =

MOSFET - PowerTrench),N-Channel, Dual CoolE,Shielded Gate150 V, 40 A, 17 mWFDMS86200DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON SemiconductorsELECTRICAL CONNECTIONadvanced PowerTrench process that incorporates Shielded Gatetechnology. Advancements in both silicon and Dual CoolTM packageS Dtechnologies have been combined to offer the

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur