FCH072N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH072N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 481 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 199 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de FCH072N60F MOSFET
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FCH072N60F datasheet
fch072n60f.pdf
December 2013 FCH072N60F N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 65 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techno
fch072n60f f085.pdf
November 2014 FCH072N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 m D Features Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package drawing,
fch072n60f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch072n60f.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCH072N60F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
Otros transistores... FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , FCD380N60E , FCD900N60Z , FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , K4145 , FDMB2308PZ , FDMS3669S , FDZ1323NZ , FDPC8012S , FDMS86152 , FDN537N , FDB9406F085 , FDD120AN15F085 .
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