FCH072N60F MOSFET. Datasheet pdf. Equivalent

December 2013FCH072N60FN-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 65 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techno

November 2014FCH072N60F_F085N-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 m DFeatures Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCH072N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

FCH072N60F-F085N-Channel SuperFET II FRFET MOSFET600 V, 52 A, 72 mDFeatures Typical RDS(on) = 62 m at VGS = 10 V, ID = 26 A Typical Qg(tot) = 160 nC at VGS = 10V, ID = 26 A UIS Capability G Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is u

August 2014FCH072N60N-Channel SuperFET II MOSFET600 V, 52 A, 72 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 66 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 95 nC)and lower

December 2014FCH077N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 m DFeatures Typical RDS(on) = 68 m at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing

April 2015FCH070N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 52 A, 70 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 58 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 128 nC

December 2014FCH077N65FN-Channel SuperFET II FRFET MOSFET650 V, 54 A, 77 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 68 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 126 nC

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 54 A, 77 mWFCH077N65F-F085DescriptionSuperFET II MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FCH070N60EFEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 70m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25