FDMS86152 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS86152
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 595 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: PQFN
- Selección de transistores por parámetros
FDMS86152 Datasheet (PDF)
fdms86152.pdf

February 2013FDMS86152N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 Abeen especially tailored to minimize the on-state resistance and Advanced P
fdms86150et100.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86150.pdf

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the
fdms86150et100.pdf

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFNJ9130 | SQM120P04-04L | MCG10P03-TP | UT3400G-AE2-R | 2N5903 | AP4506GEM | CS3410BR
History: IRFNJ9130 | SQM120P04-04L | MCG10P03-TP | UT3400G-AE2-R | 2N5903 | AP4506GEM | CS3410BR



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