FDMS86152 Todos los transistores

 

FDMS86152 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86152

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: PQFN

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FDMS86152 Datasheet (PDF)

1.1. fdms86152.pdf Size:242K _fairchild_semi

FDMS86152
FDMS86152

February 2013 FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Semiconductor‘s advanced Power Trench® process thant has Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P

2.1. fdms86150et100.pdf Size:316K _upd-mosfet

FDMS86152
FDMS86152

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.85 mΩ Features Extended TJ rating to 175°C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

2.2. fdms86150.pdf Size:298K _fairchild_semi

FDMS86152
FDMS86152

November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

 2.3. fdms86150a.pdf Size:268K _fairchild_semi

FDMS86152
FDMS86152

December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

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