FDMS86152 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86152  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 595 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: PQFN

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FDMS86152 datasheet

 ..1. Size:242K  fairchild semi
fdms86152.pdf pdf_icon

FDMS86152

February 2013 FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P

 6.1. Size:358K  1
fdms86150et100.pdf pdf_icon

FDMS86152

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:298K  fairchild semi
fdms86150.pdf pdf_icon

FDMS86152

November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

 6.3. Size:316K  fairchild semi
fdms86150et100.pdf pdf_icon

FDMS86152

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

Otros transistores... FCD600N60Z, FDD1600N10ALZD, FDD850N10LD, FCH072N60F, FDMB2308PZ, FDMS3669S, FDZ1323NZ, FDPC8012S, IRF1010E, FDN537N, FDB9406F085, FDD120AN15F085, FDPC4044, FDMC8360L, FDMC86340, FDMC86570L, FDN371N