FDMS86152. Аналоги и основные параметры
Наименование производителя: FDMS86152
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.7 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 595 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: PQFN
Аналог (замена) для FDMS86152
- подборⓘ MOSFET транзистора по параметрам
FDMS86152 даташит
fdms86152.pdf
February 2013 FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P
fdms86150et100.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86150.pdf
November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the
fdms86150et100.pdf
January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p
Другие MOSFET... FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ , FDPC8012S , IRF1010E , FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , FDN371N .
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