All MOSFET. FDMS86152 Datasheet

 

FDMS86152 Datasheet and Replacement


   Type Designator: FDMS86152
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 595 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PQFN
 

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FDMS86152 Datasheet (PDF)

 ..1. Size:242K  fairchild semi
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FDMS86152

February 2013FDMS86152N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 Abeen especially tailored to minimize the on-state resistance and Advanced P

 6.1. Size:358K  1
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FDMS86152

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:298K  fairchild semi
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FDMS86152

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

 6.3. Size:316K  fairchild semi
fdms86150et100.pdf pdf_icon

FDMS86152

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p

Datasheet: FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ , FDPC8012S , IRF530 , FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , FDN371N .

History: RUH30150M | R6006JNX | KP809B | IRFS830B | FDS8672S | FDD850N10LD | BUZ10S2

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