FDMS36101LF085 Todos los transistores

 

FDMS36101LF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS36101LF085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 229 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: PQFN5X6
 

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FDMS36101LF085 Datasheet (PDF)

 4.1. Size:421K  fairchild semi
 fdms36101l f085.pdf pdf_icon

FDMS36101LF085

June 2013FDMS36101L_F085N-Channel Power Trench MOSFET100V, 38A, 26m Features Typ rDS(on) = 18m at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Sy

 6.1. Size:374K  fairchild semi
 fdms3610s.pdf pdf_icon

FDMS36101LF085

December 2011FDMS3610SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.1. Size:560K  fairchild semi
 fdms3615s.pdf pdf_icon

FDMS36101LF085

August 2011FDMS3615SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 m at VGS = 10 V, ID = 16 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 m at VGS =

MOSTRAR MÁS

Otros transistores... FQP2N40 , FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , IRF730 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 .

History: IRF7306PBF

 

 
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