FDMS36101LF085 Datasheet and Replacement
Type Designator: FDMS36101LF085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 229 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: PQFN5X6
FDMS36101LF085 substitution
FDMS36101LF085 Datasheet (PDF)
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fdms3615s.pdf

August 2011FDMS3615SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 m at VGS = 10 V, ID = 16 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 m at VGS =
Datasheet: FQP2N40 , FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , IRF730 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 .
History: FQP9N50C
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History: FQP9N50C



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