All MOSFET. FDMS36101LF085 Datasheet

 

FDMS36101LF085 Datasheet and Replacement


   Type Designator: FDMS36101LF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 229 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: PQFN5X6
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FDMS36101LF085 Datasheet (PDF)

 4.1. Size:421K  fairchild semi
fdms36101l f085.pdf pdf_icon

FDMS36101LF085

June 2013FDMS36101L_F085N-Channel Power Trench MOSFET100V, 38A, 26m Features Typ rDS(on) = 18m at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Sy

 6.1. Size:374K  fairchild semi
fdms3610s.pdf pdf_icon

FDMS36101LF085

December 2011FDMS3610SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeaturesGeneral DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 Adual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

 7.1. Size:560K  fairchild semi
fdms3615s.pdf pdf_icon

FDMS36101LF085

August 2011FDMS3615SPowerTrench Power Stage25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 m at VGS = 10 V, ID = 16 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 m at VGS =

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History: LSF65R570GT | CSD16342Q5A

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