FDMC86261P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC86261P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.4 nS
Cossⓘ - Capacitancia de salida: 87 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: MLP3.3X3.3
Búsqueda de reemplazo de FDMC86261P MOSFET
FDMC86261P Datasheet (PDF)
fdmc86261p.pdf

June 2014FDMC86261PP-Channel PowerTrench MOSFET -150 V, -9 A, 160 mFeatures General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 Avery high density process is especially tailored to minimize Very low RD
fdmc86260.pdf

December 2012FDMC86260N-Channel Power Trench MOSFET 150 V, 16 A, 34 mFeatures General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 Abeen especially tailored to minimize the on-state resistance and High perf
fdmc86260et150.pdf

January 2015FDMC86260ET150N-Channel Power Trench MOSFET150 V, 25 A, 34 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 Abeen especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at
fdmc86262p.pdf

April 2015FDMC86262PP-Channel PowerTrench MOSFET-150 V, -2 A, 307 mFeatures General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 ASemiconductors advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 Avery high density process is especially tailored to minimize on-state resis
Otros transistores... NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , RU7088R , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 .
History: FDMS86540 | WMN10N65C4 | WNM2046B
History: FDMS86540 | WMN10N65C4 | WNM2046B



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