FDMC86261P. Аналоги и основные параметры
Наименование производителя: FDMC86261P
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2.4 ns
Cossⓘ - Выходная емкость: 87 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: MLP3.3X3.3
Аналог (замена) для FDMC86261P
- подборⓘ MOSFET транзистора по параметрам
FDMC86261P даташит
fdmc86261p.pdf
June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD
fdmc86260.pdf
December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf
fdmc86260et150.pdf
January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at
fdmc86262p.pdf
April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 A Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis
Другие MOSFET... NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , IRFZ48N , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 .
History: FDB42AN15F085
History: FDB42AN15F085
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