FDMC86261P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMC86261P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2.4 ns
Cossⓘ - Выходная емкость: 87 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: MLP3.3X3.3
- подбор MOSFET транзистора по параметрам
FDMC86261P Datasheet (PDF)
fdmc86261p.pdf

June 2014FDMC86261PP-Channel PowerTrench MOSFET -150 V, -9 A, 160 mFeatures General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 Avery high density process is especially tailored to minimize Very low RD
fdmc86260.pdf

December 2012FDMC86260N-Channel Power Trench MOSFET 150 V, 16 A, 34 mFeatures General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 Abeen especially tailored to minimize the on-state resistance and High perf
fdmc86260et150.pdf

January 2015FDMC86260ET150N-Channel Power Trench MOSFET150 V, 25 A, 34 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 Abeen especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at
fdmc86262p.pdf

April 2015FDMC86262PP-Channel PowerTrench MOSFET-150 V, -2 A, 307 mFeatures General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 ASemiconductors advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 Avery high density process is especially tailored to minimize on-state resis
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: VN0335N5 | IXFX170N20T | STM8457 | SQM100N10-10 | 2SK1596 | OSG70R1KAF | STP6N80K5
History: VN0335N5 | IXFX170N20T | STM8457 | SQM100N10-10 | 2SK1596 | OSG70R1KAF | STP6N80K5



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