All MOSFET. FDMC86261P Datasheet

 

FDMC86261P Datasheet and Replacement


   Type Designator: FDMC86261P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: MLP3.3X3.3
 

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FDMC86261P Datasheet (PDF)

 ..1. Size:379K  fairchild semi
fdmc86261p.pdf pdf_icon

FDMC86261P

June 2014FDMC86261PP-Channel PowerTrench MOSFET -150 V, -9 A, 160 mFeatures General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 Avery high density process is especially tailored to minimize Very low RD

 6.1. Size:246K  fairchild semi
fdmc86260.pdf pdf_icon

FDMC86261P

December 2012FDMC86260N-Channel Power Trench MOSFET 150 V, 16 A, 34 mFeatures General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 Abeen especially tailored to minimize the on-state resistance and High perf

 6.2. Size:269K  fairchild semi
fdmc86260et150.pdf pdf_icon

FDMC86261P

January 2015FDMC86260ET150N-Channel Power Trench MOSFET150 V, 25 A, 34 mFeatures General Description Extended TJ rating to 175C This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 Abeen especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at

 6.3. Size:328K  fairchild semi
fdmc86262p.pdf pdf_icon

FDMC86261P

April 2015FDMC86262PP-Channel PowerTrench MOSFET-150 V, -2 A, 307 mFeatures General DescriptionThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 ASemiconductors advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 Avery high density process is especially tailored to minimize on-state resis

Datasheet: NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , RU7088R , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 .

History: R5007FNX

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