FDMC86261P Specs and Replacement
Type Designator: FDMC86261P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: MLP3.3X3.3
FDMC86261P substitution
- MOSFET ⓘ Cross-Reference Search
FDMC86261P datasheet
fdmc86261p.pdf
June 2014 FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 m Features General Description Max rDS(on) = 160 m at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 185 m at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD... See More ⇒
fdmc86260.pdf
December 2012 FDMC86260 N-Channel Power Trench MOSFET 150 V, 16 A, 34 m Features General Description Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 44 m at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf... See More ⇒
fdmc86260et150.pdf
January 2015 FDMC86260ET150 N-Channel Power Trench MOSFET 150 V, 25 A, 34 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 m at... See More ⇒
fdmc86262p.pdf
April 2015 FDMC86262P P-Channel PowerTrench MOSFET -150 V, -2 A, 307 m Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 m at VGS = -10 V, ID = -2 A Semiconductor s advanced PowerTrench technology. This Max rDS(on) = 356 m at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis... See More ⇒
Detailed specifications: NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , IRFZ48N , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 .
History: FDMS36101LF085 | FDB42AN15F085 | FDPF7N50U | FDMC612PZ
Keywords - FDMC86261P MOSFET specs
FDMC86261P cross reference
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FDMC86261P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDMS36101LF085 | FDB42AN15F085 | FDPF7N50U | FDMC612PZ
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