FDMS86263P Todos los transistores

 

FDMS86263P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS86263P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 238 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET FDMS86263P

 

FDMS86263P Datasheet (PDF)

 ..1. Size:406K  1
fdms86263p.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:295K  fairchild semi
fdms86263p.pdf

FDMS86263P
FDMS86263P

October 2014FDMS86263PP-Channel PowerTrench MOSFET-150 V, -22 A, 53 mFeatures General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductors advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-

 7.1. Size:399K  1
fdms86252.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:519K  1
fdms86200.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:453K  1
fdms86201.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:463K  1
fdms86250.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.5. Size:398K  1
fdms86252l.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.6. Size:262K  fairchild semi
fdms86252.pdf

FDMS86263P
FDMS86263P

August 2010FDMS86252N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and yet maintain

 7.7. Size:342K  fairchild semi
fdms86255.pdf

FDMS86263P
FDMS86263P

December 2013FDMS86255N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 1

 7.8. Size:290K  fairchild semi
fdms8622.pdf

FDMS86263P
FDMS86263P

July 2011FDMS8622N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 mFeatures General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 Abeen optimized for rDS(on), switching performance and High performance trench

 7.9. Size:211K  fairchild semi
fdms86200.pdf

FDMS86263P
FDMS86263P

Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance

 7.10. Size:216K  fairchild semi
fdms86201.pdf

FDMS86263P
FDMS86263P

Preliminary Datasheet April 2010FDMS86201N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 Abeen especially tailored to minimize the on-state r

 7.11. Size:354K  fairchild semi
fdms86250.pdf

FDMS86263P
FDMS86263P

October 2014FDMS86250N-Channel Shielded Gate PowerTrench MOSFET150 V, 30 A, 25 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 Aincorporates Shielded Gate technology. This process has been optimized for the on-st

 7.12. Size:341K  fairchild semi
fdms86202.pdf

FDMS86263P
FDMS86263P

July 2014FDMS86202N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This process has been optimized for the on-s

 7.13. Size:290K  fairchild semi
fdms86252l.pdf

FDMS86263P
FDMS86263P

October 2014FDMS86252LN-Channel Shielded Gate PowerTrench MOSFET150 V, 12 A, 56 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 Aincorporates Shielded Gate technology. This process has been optimized for the on

 7.14. Size:372K  fairchild semi
fdms86200dc.pdf

FDMS86263P
FDMS86263P

December 2013FDMS86200DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) =

 7.15. Size:303K  fairchild semi
fdms86255et150.pdf

FDMS86263P
FDMS86263P

January 2015FDMS86255ET150N-Channel Shielded Gate PowerTrench MOSFET150 V, 63 A, 12.4 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This

 7.16. Size:314K  fairchild semi
fdms86202et120.pdf

FDMS86263P
FDMS86263P

January 2015FDMS86202ET120N-Channel Shielded Gate PowerTrench MOSFET120 V, 102 A, 7.2 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This p

 7.17. Size:399K  onsemi
fdms86252.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.18. Size:348K  onsemi
fdms86255.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.19. Size:571K  onsemi
fdms8622.pdf

FDMS86263P
FDMS86263P

August 2018FDMS8622N-Channel Shielded Gate PowerTrench MOSFET100 V, 16.5 A, 56 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 Aincorporates Shielded Gate technology. This process has been Max rDS(o

 7.20. Size:519K  onsemi
fdms86200.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.21. Size:463K  onsemi
fdms86250.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.22. Size:386K  onsemi
fdms86202.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.23. Size:398K  onsemi
fdms86252l.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.24. Size:913K  onsemi
fdms86200dc.pdf

FDMS86263P
FDMS86263P

MOSFET - PowerTrench),N-Channel, Dual CoolE,Shielded Gate150 V, 40 A, 17 mWFDMS86200DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON SemiconductorsELECTRICAL CONNECTIONadvanced PowerTrench process that incorporates Shielded Gatetechnology. Advancements in both silicon and Dual CoolTM packageS Dtechnologies have been combined to offer the

 7.25. Size:345K  onsemi
fdms86255et150.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.26. Size:356K  onsemi
fdms86202et120.pdf

FDMS86263P
FDMS86263P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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