FDMS86263P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS86263P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 238 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
Encapsulados: PQFN5X6
Búsqueda de reemplazo de FDMS86263P MOSFET
- Selecciónⓘ de transistores por parámetros
FDMS86263P datasheet
..1. Size:406K 1
fdms86263p.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..2. Size:295K fairchild semi
fdms86263p.pdf
October 2014 FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 m Features General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductor s advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-
7.1. Size:399K 1
fdms86252.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.2. Size:519K 1
fdms86200.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.3. Size:453K 1
fdms86201.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.4. Size:463K 1
fdms86250.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.5. Size:398K 1
fdms86252l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.6. Size:262K fairchild semi
fdms86252.pdf
August 2010 FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and yet maintain
7.7. Size:342K fairchild semi
fdms86255.pdf
December 2013 FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 1
7.8. Size:290K fairchild semi
fdms8622.pdf
July 2011 FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A been optimized for rDS(on), switching performance and High performance trench
7.9. Size:211K fairchild semi
fdms86200.pdf
Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance
7.10. Size:216K fairchild semi
fdms86201.pdf
Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r
7.11. Size:354K fairchild semi
fdms86250.pdf
October 2014 FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 A incorporates Shielded Gate technology. This process has been optimized for the on-st
7.12. Size:341K fairchild semi
fdms86202.pdf
July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s
7.13. Size:290K fairchild semi
fdms86252l.pdf
October 2014 FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 A incorporates Shielded Gate technology. This process has been optimized for the on
7.14. Size:372K fairchild semi
fdms86200dc.pdf
December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =
7.15. Size:303K fairchild semi
fdms86255et150.pdf
January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 63 A, 12.4 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This
7.16. Size:314K fairchild semi
fdms86202et120.pdf
January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 102 A, 7.2 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p
7.17. Size:399K onsemi
fdms86252.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.18. Size:348K onsemi
fdms86255.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.19. Size:571K onsemi
fdms8622.pdf
August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16.5 A, 56 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A incorporates Shielded Gate technology. This process has been Max rDS(o
7.20. Size:519K onsemi
fdms86200.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.21. Size:463K onsemi
fdms86250.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.22. Size:386K onsemi
fdms86202.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.23. Size:398K onsemi
fdms86252l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.24. Size:913K onsemi
fdms86200dc.pdf
MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the
7.25. Size:345K onsemi
fdms86255et150.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.26. Size:356K onsemi
fdms86202et120.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FDMC610P
, FDMC86261P
, FCB20N60F085
, FDPC8016S
, FCPF400N80Z
, FCH47N60F085
, FDMS86255
, FDBL86210F085
, K2611
, FCMT199N60
, FQA13N50CF109
, FQP2P40
, FQP3N50C
, FDB20N50F
, FDH210N08
, FDMC86139P
, FDZ1416NZ
.
History: RJK03C2DPB
| FQP3N50C
