FDMS86263P MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS86263P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 238 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: PQFN5X6
FDMS86263P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS86263P Datasheet (PDF)
fdms86263p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86263p.pdf
October 2014FDMS86263PP-Channel PowerTrench MOSFET-150 V, -22 A, 53 mFeatures General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductors advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-
fdms86252.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86201.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86250.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252.pdf
August 2010FDMS86252N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and yet maintain
fdms86255.pdf
December 2013FDMS86255N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 1
fdms8622.pdf
July 2011FDMS8622N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 mFeatures General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 Abeen optimized for rDS(on), switching performance and High performance trench
fdms86200.pdf
Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance
fdms86201.pdf
Preliminary Datasheet April 2010FDMS86201N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 Abeen especially tailored to minimize the on-state r
fdms86250.pdf
October 2014FDMS86250N-Channel Shielded Gate PowerTrench MOSFET150 V, 30 A, 25 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 Aincorporates Shielded Gate technology. This process has been optimized for the on-st
fdms86202.pdf
July 2014FDMS86202N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This process has been optimized for the on-s
fdms86252l.pdf
October 2014FDMS86252LN-Channel Shielded Gate PowerTrench MOSFET150 V, 12 A, 56 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 Aincorporates Shielded Gate technology. This process has been optimized for the on
fdms86200dc.pdf
December 2013FDMS86200DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) =
fdms86255et150.pdf
January 2015FDMS86255ET150N-Channel Shielded Gate PowerTrench MOSFET150 V, 63 A, 12.4 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This
fdms86202et120.pdf
January 2015FDMS86202ET120N-Channel Shielded Gate PowerTrench MOSFET120 V, 102 A, 7.2 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This p
fdms86252.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86255.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8622.pdf
August 2018FDMS8622N-Channel Shielded Gate PowerTrench MOSFET100 V, 16.5 A, 56 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 Aincorporates Shielded Gate technology. This process has been Max rDS(o
fdms86200.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86250.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86202.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86252l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86200dc.pdf
MOSFET - PowerTrench),N-Channel, Dual CoolE,Shielded Gate150 V, 40 A, 17 mWFDMS86200DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON SemiconductorsELECTRICAL CONNECTIONadvanced PowerTrench process that incorporates Shielded Gatetechnology. Advancements in both silicon and Dual CoolTM packageS Dtechnologies have been combined to offer the
fdms86255et150.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms86202et120.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
