FDMS86263P
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS86263P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.4
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 238
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.053
Ohm
Тип корпуса:
PQFN5X6
- подбор MOSFET транзистора по параметрам
FDMS86263P
Datasheet (PDF)
..1. Size:406K 1
fdms86263p.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..2. Size:295K fairchild semi
fdms86263p.pdf 

October 2014FDMS86263PP-Channel PowerTrench MOSFET-150 V, -22 A, 53 mFeatures General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductors advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-
7.1. Size:399K 1
fdms86252.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.2. Size:519K 1
fdms86200.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.3. Size:453K 1
fdms86201.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.4. Size:463K 1
fdms86250.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.5. Size:398K 1
fdms86252l.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.6. Size:262K fairchild semi
fdms86252.pdf 

August 2010FDMS86252N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and yet maintain
7.7. Size:342K fairchild semi
fdms86255.pdf 

December 2013FDMS86255N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 1
7.8. Size:290K fairchild semi
fdms8622.pdf 

July 2011FDMS8622N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 mFeatures General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 Abeen optimized for rDS(on), switching performance and High performance trench
7.9. Size:211K fairchild semi
fdms86200.pdf 

Preliminary DatasheetApril 2010FDMS86200N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 Abeen especially tailored to minimize the on-state resistance
7.10. Size:216K fairchild semi
fdms86201.pdf 

Preliminary Datasheet April 2010FDMS86201N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 Abeen especially tailored to minimize the on-state r
7.11. Size:354K fairchild semi
fdms86250.pdf 

October 2014FDMS86250N-Channel Shielded Gate PowerTrench MOSFET150 V, 30 A, 25 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 Aincorporates Shielded Gate technology. This process has been optimized for the on-st
7.12. Size:341K fairchild semi
fdms86202.pdf 

July 2014FDMS86202N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This process has been optimized for the on-s
7.13. Size:290K fairchild semi
fdms86252l.pdf 

October 2014FDMS86252LN-Channel Shielded Gate PowerTrench MOSFET150 V, 12 A, 56 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 Aincorporates Shielded Gate technology. This process has been optimized for the on
7.14. Size:372K fairchild semi
fdms86200dc.pdf 

December 2013FDMS86200DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) =
7.15. Size:303K fairchild semi
fdms86255et150.pdf 

January 2015FDMS86255ET150N-Channel Shielded Gate PowerTrench MOSFET150 V, 63 A, 12.4 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 Aincorporates Shielded Gate technology. This
7.16. Size:314K fairchild semi
fdms86202et120.pdf 

January 2015FDMS86202ET120N-Channel Shielded Gate PowerTrench MOSFET120 V, 102 A, 7.2 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 Aincorporates Shielded Gate technology. This p
7.17. Size:399K onsemi
fdms86252.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.18. Size:348K onsemi
fdms86255.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.19. Size:571K onsemi
fdms8622.pdf 

August 2018FDMS8622N-Channel Shielded Gate PowerTrench MOSFET100 V, 16.5 A, 56 mFeatures General Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 Aincorporates Shielded Gate technology. This process has been Max rDS(o
7.20. Size:519K onsemi
fdms86200.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.21. Size:463K onsemi
fdms86250.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.22. Size:386K onsemi
fdms86202.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.23. Size:398K onsemi
fdms86252l.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.24. Size:913K onsemi
fdms86200dc.pdf 

MOSFET - PowerTrench),N-Channel, Dual CoolE,Shielded Gate150 V, 40 A, 17 mWFDMS86200DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using ON SemiconductorsELECTRICAL CONNECTIONadvanced PowerTrench process that incorporates Shielded Gatetechnology. Advancements in both silicon and Dual CoolTM packageS Dtechnologies have been combined to offer the
7.25. Size:345K onsemi
fdms86255et150.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.26. Size:356K onsemi
fdms86202et120.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... IRFP344
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History: R6504ENJ
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