FQP2P40 Todos los transistores

 

FQP2P40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP2P40
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: TO220
 

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FQP2P40 Datasheet (PDF)

 ..1. Size:632K  fairchild semi
 fqp2p40.pdf pdf_icon

FQP2P40

December 2013FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 10 nC)planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been esp

 ..2. Size:1099K  onsemi
 fqp2p40.pdf pdf_icon

FQP2P40

FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using ON Semiconductors Low Gate Charge (Typ. 10 nC)proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been especially

 9.1. Size:547K  fairchild semi
 fqp2p25.pdf pdf_icon

FQP2P40

April 2000TMQFETQFETQFETQFETFQP2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has bee

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History: IRFB17N50LPBF | IRLU7821

 

 
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