FQP2P40 - аналоги, параметры транзистора - Справочник транзисторов

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December 2013 FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 10 nC) planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been esp

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FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using ON Semiconductor s Low Gate Charge (Typ. 10 nC) proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been especially

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April 2000 TM QFET QFET QFET QFET FQP2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has bee

Другие MOSFET... FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , MMIS60R580P , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P .