FQP2P40 - параметры транзистора MOSFET, его аналоги, datasheet

FQP2P40 Datasheet (PDF)

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December 2013FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 10 nC)planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been esp

..2. Size:1099K onsemi
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FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using ON Semiconductors Low Gate Charge (Typ. 10 nC)proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been especially

9.1. Size:547K fairchild semi
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April 2000TMQFETQFETQFETQFETFQP2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has bee

Другие MOSFET... FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , 2N7002 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P .