FQP2P40 Specs and Replacement
Type Designator: FQP2P40
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO220
FQP2P40 substitution
- MOSFET ⓘ Cross-Reference Search
FQP2P40 datasheet
fqp2p40.pdf
December 2013 FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 10 nC) planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been esp... See More ⇒
fqp2p40.pdf
FQP2P40 P-Channel QFET MOSFET -400 V, -2.0 A, 6.5 Description Features These P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 V transistors are produced using ON Semiconductor s Low Gate Charge (Typ. 10 nC) proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF) This advanced technology has been especially... See More ⇒
fqp2p25.pdf
April 2000 TM QFET QFET QFET QFET FQP2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has bee... See More ⇒
Detailed specifications: FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , MMIS60R580P , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P .
Keywords - FQP2P40 MOSFET specs
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