FQP2P40 Datasheet and Replacement
Type Designator: FQP2P40
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO220
FQP2P40 substitution
FQP2P40 Datasheet (PDF)
fqp2p40.pdf
December 2013FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 10 nC)planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been esp
fqp2p40.pdf
FQP2P40P-Channel QFET MOSFET-400 V, -2.0 A, 6.5 Description FeaturesThese P-Channel enhancement mode power field effect -2.0 A, -400 V, RDS(on) = 6.5 (Max.) @ VGS = -10 Vtransistors are produced using ON Semiconductors Low Gate Charge (Typ. 10 nC)proprietary, planar stripe, DMOS technology. Low Crss (Typ. 6.5 pF)This advanced technology has been especially
fqp2p25.pdf
April 2000TMQFETQFETQFETQFETFQP2P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has bee
Datasheet: FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , STP65NF06 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P .
History: IRFS31N20DP
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History: IRFS31N20DP
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