FDMS0310AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS0310AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 655 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET FDMS0310AS

FDMS0310AS Datasheet (PDF)

..1. Size:337K fairchild semi
fdms0310as.pdf

August 2014FDMS0310ASN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest A

6.1. Size:454K fairchild semi
fdms0310s.pdf

January 2015FDMS0310SN-Channel PowerTrench SyncFETTM30 V, 42 A, 4 mFeatures General DescriptionThe FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest Advan

7.1. Size:270K fairchild semi
fdms0312s.pdf

January 2010FDMS0312SN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 mFeatures General DescriptionThe FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest

7.2. Size:305K fairchild semi
fdms0312as.pdf

October 2014FDMS0312ASN-Channel PowerTrench SyncFETTM30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest A

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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