FDMS0310AS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMS0310AS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.9 ns
Cossⓘ - Выходная емкость: 655 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0043 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS0310AS
FDMS0310AS Datasheet (PDF)
fdms0310as.pdf
August 2014FDMS0310ASN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest A
fdms0310s.pdf
January 2015FDMS0310SN-Channel PowerTrench SyncFETTM30 V, 42 A, 4 mFeatures General DescriptionThe FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest Advan
fdms0312s.pdf
January 2010FDMS0312SN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 mFeatures General DescriptionThe FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest
fdms0312as.pdf
October 2014FDMS0312ASN-Channel PowerTrench SyncFETTM30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest A
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918