All MOSFET. FDMS0310AS Datasheet

 

FDMS0310AS Datasheet and Replacement


   Type Designator: FDMS0310AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 655 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: PQFN5X6
 

 FDMS0310AS substitution

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FDMS0310AS Datasheet (PDF)

 ..1. Size:337K  fairchild semi
fdms0310as.pdf pdf_icon

FDMS0310AS

August 2014FDMS0310ASN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest A

 6.1. Size:454K  fairchild semi
fdms0310s.pdf pdf_icon

FDMS0310AS

January 2015FDMS0310SN-Channel PowerTrench SyncFETTM30 V, 42 A, 4 mFeatures General DescriptionThe FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest Advan

 7.1. Size:270K  fairchild semi
fdms0312s.pdf pdf_icon

FDMS0310AS

January 2010FDMS0312SN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 mFeatures General DescriptionThe FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest

 7.2. Size:305K  fairchild semi
fdms0312as.pdf pdf_icon

FDMS0310AS

October 2014FDMS0312ASN-Channel PowerTrench SyncFETTM30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest A

Datasheet: FDMS5362LF085 , FDMD84100 , FCH041N60E , FDMC6686P , FDMS86150A , FDMS8670S , FDMS0308AS , FDMS0309AS , IRF1404 , FDMS0312AS , FQB27N25TMF085 , FDBL9403F085 , FDBL9406F085 , FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P .

History: WMN08N80M3 | FQB60N03L | NTMFS6B05NT3G | SML4020HN | OSG50R1K5FF | SSI4N80AS | IPP80N06S4L-07

Keywords - FDMS0310AS MOSFET datasheet

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