FCH041N65F Todos los transistores

 

FCH041N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCH041N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 595 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 355 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO247
 

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FCH041N65F Datasheet (PDF)

 ..1. Size:635K  fairchild semi
fch041n65f f085.pdf pdf_icon

FCH041N65F

November 2014FCH041N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,

 ..2. Size:1373K  fairchild semi
fch041n65f.pdf pdf_icon

FCH041N65F

December 2014FCH041N65FN-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC

 0.1. Size:416K  onsemi
fch041n65f-f085.pdf pdf_icon

FCH041N65F

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 76 A, 41 mWFCH041N65F-F085DescriptionSuperFET II Mosfet is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

 6.1. Size:617K  fairchild semi
fch041n60f f085.pdf pdf_icon

FCH041N65F

April 2015FCH041N60F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 AG Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche TestedG Qualified to AEC Q101DTO-247SS RoHS CompliantDescription Forcurrentpackagedra

Otros transistores... FDBL9403F085 , FDBL9406F085 , FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , IRF9540 , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 .

History: NCEP035N72GU | SM1C01NSF | SI7358ADP | NCE20PD05 | SFP035N95C3 | IRLI3705NPBF | IRLB3034

 

 
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