FCH041N65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FCH041N65F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 595 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 47 ns
Cossⓘ - Выходная емкость: 355 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm
Тип корпуса: TO247
Аналог (замена) для FCH041N65F
FCH041N65F Datasheet (PDF)
fch041n65f f085.pdf
November 2014FCH041N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,
fch041n65f.pdf
December 2014FCH041N65FN-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC
fch041n65f-f085.pdf
MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 76 A, 41 mWFCH041N65F-F085DescriptionSuperFET II Mosfet is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu
fch041n60f f085.pdf
April 2015FCH041N60F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 AG Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche TestedG Qualified to AEC Q101DTO-247SS RoHS CompliantDescription Forcurrentpackagedra
fch041n60e.pdf
December 2013FCH041N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 77 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC
fch041n60f.pdf
December 2013FCH041N60FN-Channel SuperFET II FRFET MOSFET600 V, 76 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn
fch041n60f.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch041n60f.pdf
isc N-Channel MOSFET Transistor FCH041N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918