FCH041N65F PDF and Equivalents Search

 

FCH041N65F Specs and Replacement

Type Designator: FCH041N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 595 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 355 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO247

FCH041N65F substitution

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FCH041N65F datasheet

 ..1. Size:635K  fairchild semi
fch041n65f f085.pdf pdf_icon

FCH041N65F

November 2014 FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package drawing,... See More ⇒

 ..2. Size:1373K  fairchild semi
fch041n65f.pdf pdf_icon

FCH041N65F

December 2014 FCH041N65F N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC... See More ⇒

 0.1. Size:416K  onsemi
fch041n65f-f085.pdf pdf_icon

FCH041N65F

MOSFET N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65F-F085 Description SuperFET II Mosfet is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize VDS RDS(ON) MAX ID MAX condu... See More ⇒

 6.1. Size:617K  fairchild semi
fch041n60f f085.pdf pdf_icon

FCH041N65F

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra... See More ⇒

Detailed specifications: FDBL9403F085, FDBL9406F085, FDMS86163P, FDBL9401F085, FDD9409F085, FDMA86265P, FDMC86265P, FDMD82100L, 2N7000, FCH130N60, FCH170N60, FDN86265P, FCH077N65F, FCH190N65F, FDB86363F085, FCH104N60, FCP104N60

Keywords - FCH041N65F MOSFET specs

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