FDN86265P Todos los transistores

 

FDN86265P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDN86265P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 0.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 17 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SSOT3

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FDN86265P datasheet

 ..1. Size:270K  fairchild semi
fdn86265p.pdf pdf_icon

FDN86265P

May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch

 8.1. Size:157K  fairchild semi
fdn86246.pdf pdf_icon

FDN86265P

December 2010 FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A been optimized for rDS(on), switching performance and ruggedness. High pe

 9.1. Size:158K  fairchild semi
fdn8601.pdf pdf_icon

FDN86265P

July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform

 9.2. Size:683K  fairchild semi
fdn86501lz.pdf pdf_icon

FDN86265P

April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),

Otros transistores... FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , 7N65 , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU .

 

 

 


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