FDN86265P Specs and Replacement
Type Designator: FDN86265P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SSOT3
FDN86265P substitution
- MOSFET ⓘ Cross-Reference Search
FDN86265P datasheet
fdn86265p.pdf
May 2014 FDN86265P P-Channel PowerTrench MOSFET -150 V, -0.8 A, 1.2 Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.2 at VGS = -10 V, ID = -0.8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.7 A been optimized for the on-state resistance and yet maintain superior switch... See More ⇒
fdn86246.pdf
December 2010 FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 261 m at VGS = 10 V, ID = 1.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 359 m at VGS = 6 V, ID = 1.4 A been optimized for rDS(on), switching performance and ruggedness. High pe... See More ⇒
fdn8601.pdf
July 2010 FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 109 m at VGS = 10 V, ID = 1.5 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 175 m at VGS = 6 V, ID = 1.2 A been optimized for rDS(on), switching performance and ruggedness. High perform... See More ⇒
fdn86501lz.pdf
April 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench MOSFET 60 V, 2.6 A, 116 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 116 m at VGS = 10 V, ID = 2.6 A incorporates Shielded Gate technology. This process has been optimized for rDS(on),... See More ⇒
Detailed specifications: FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , 7N65 , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , FDPF44N25TRDTU , FDPF51N25RDTU .
History: CSD86311W1723 | FCMT299N60
Keywords - FDN86265P MOSFET specs
FDN86265P cross reference
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FDN86265P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: CSD86311W1723 | FCMT299N60
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