FCPF650N80Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF650N80Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 36 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Encapsulados: TO220F
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FCPF650N80Z datasheet
fcpf650n80z.pdf
August 2014 FCPF650N80Z N-Channel SuperFET II MOSFET 800 V, 8 A, 650 m Features Description RDS(on) = 530 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 27 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.8 uJ @ 400V
fcpf650n80z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf650n80z.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF650N80Z FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance ESD improved capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSO
fcp600n60z fcpf600n60z.pdf
November 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =
Otros transistores... FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 , 12N60 , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , FPF1C2P5MF07AM .
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