FCPF650N80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCPF650N80Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET FCPF650N80Z

FCPF650N80Z Datasheet (PDF)

..1. Size:628K fairchild semi
fcpf650n80z.pdf

August 2014FCPF650N80ZN-Channel SuperFET II MOSFET800 V, 8 A, 650 mFeatures Description RDS(on) = 530 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 27 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.8 uJ @ 400V

..2. Size:682K onsemi
fcpf650n80z.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:201K inchange semiconductor
fcpf650n80z.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FCPF650N80ZFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceESD improved capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSO

9.1. Size:629K fairchild semi
fcp600n60z fcpf600n60z.pdf

November 2013FCP600N60Z / FCPF600N60ZN-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

9.2. Size:1257K onsemi
fcpf600n60zl1.pdf

www.onsemi.comFCPF600N60ZL1N-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)and lo

9.3. Size:807K onsemi
fcp600n60z fcpf600n60z.pdf

9.4. Size:287K onsemi
fcpf600n65s3r0l.pdf

FCPF600N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 6 A, 600 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailore

9.5. Size:248K inchange semiconductor
fcpf600n60z.pdf

isc N-Channel MOSFET Transistor FCPF600N60ZFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG60R031HZF

Liste

Recientemente añadidas las descripciónes de los transistores: