FCPF650N80Z MOSFET. Datasheet pdf. Equivalent
Type Designator: FCPF650N80Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 36 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
FCPF650N80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCPF650N80Z Datasheet (PDF)
fcpf650n80z.pdf
August 2014FCPF650N80ZN-Channel SuperFET II MOSFET800 V, 8 A, 650 mFeatures Description RDS(on) = 530 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 27 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.8 uJ @ 400V
fcpf650n80z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf650n80z.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FCPF650N80ZFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceESD improved capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSO
fcp600n60z fcpf600n60z.pdf
November 2013FCP600N60Z / FCPF600N60ZN-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =
fcpf600n60zl1.pdf
www.onsemi.comFCPF600N60ZL1N-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)and lo
fcp600n60z fcpf600n60z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf600n65s3r0l.pdf
FCPF600N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 6 A, 600 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailore
fcpf600n60z.pdf
isc N-Channel MOSFET Transistor FCPF600N60ZFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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