FCPF650N80Z - описание и поиск аналогов

 

FCPF650N80Z. Аналоги и основные параметры

Наименование производителя: FCPF650N80Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 36 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO220F

Аналог (замена) для FCPF650N80Z

- подборⓘ MOSFET транзистора по параметрам

 

FCPF650N80Z даташит

 ..1. Size:628K  fairchild semi
fcpf650n80z.pdfpdf_icon

FCPF650N80Z

August 2014 FCPF650N80Z N-Channel SuperFET II MOSFET 800 V, 8 A, 650 m Features Description RDS(on) = 530 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 27 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.8 uJ @ 400V

 ..2. Size:682K  onsemi
fcpf650n80z.pdfpdf_icon

FCPF650N80Z

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:201K  inchange semiconductor
fcpf650n80z.pdfpdf_icon

FCPF650N80Z

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF650N80Z FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance ESD improved capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSO

 9.1. Size:629K  fairchild semi
fcp600n60z fcpf600n60z.pdfpdf_icon

FCPF650N80Z

November 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

Другие MOSFET... FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , FCH150N65FF155 , 12N60 , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , FPF1C2P5MF07AM .

 

 

 

 

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