FCPF650N80Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FCPF650N80Z
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 36 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO220F
Аналог (замена) для FCPF650N80Z
FCPF650N80Z Datasheet (PDF)
fcpf650n80z.pdf
August 2014FCPF650N80ZN-Channel SuperFET II MOSFET800 V, 8 A, 650 mFeatures Description RDS(on) = 530 m (Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 27 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 2.8 uJ @ 400V
fcpf650n80z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf650n80z.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FCPF650N80ZFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceESD improved capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSO
fcp600n60z fcpf600n60z.pdf
November 2013FCP600N60Z / FCPF600N60ZN-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =
fcpf600n60zl1.pdf
www.onsemi.comFCPF600N60ZL1N-Channel SuperFET II MOSFET600 V, 7.4 A, 600 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)and lo
fcp600n60z fcpf600n60z.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf600n65s3r0l.pdf
FCPF600N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 6 A, 600 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailore
fcpf600n60z.pdf
isc N-Channel MOSFET Transistor FCPF600N60ZFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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Список транзисторов
Обновления
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