2SK266 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK266
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.0006 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 650 Ohm
Paquete / Cubierta: YSTM
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2SK266 Datasheet (PDF)
3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf

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2sk2661.pdf

2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2
2sk2662.pdf

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
2sk2660.pdf

Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin
Otros transistores... JCS12N60FT , SI2301DS , ULB4132 , IRLB4132PBF , 2SK240 , 2SJ75 , 2SK146 , 2SJ73 , IRFP064N , 2SK455 , 2SK456 , 2SK147 , IFN146 , 2SK2564 , 2SK1537 , 2SK2879-01 , 2SK2367 .
History: 2N5640 | FMI13N60E | DM10N65C-2
History: 2N5640 | FMI13N60E | DM10N65C-2



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