2SK266 Specs and Replacement
Type Designator: 2SK266
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.0006 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 650 Ohm
Package: YSTM
2SK266 substitution
- MOSFET ⓘ Cross-Reference Search
2SK266 datasheet
3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf
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2sk2661.pdf
2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK2661 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode Vth = 2... See More ⇒
2sk2662.pdf
2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = ... See More ⇒
2sk2660.pdf
Power F-MOS FETs 2SK758 2SK2660(Tentative) Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 High-speed switching 5.3 0.1 4.35 0.1 High drain-source voltage (VDSS) 3.0 0.1 Applications High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) 1 Gate 1 2 3 2 Drain Parameter Symbol Ratin... See More ⇒
Detailed specifications: JCS12N60FT , SI2301DS , ULB4132 , IRLB4132PBF , 2SK240 , 2SJ75 , 2SK146 , 2SJ73 , AO4468 , 2SK455 , 2SK456 , 2SK147 , IFN146 , 2SK2564 , 2SK1537 , 2SK2879-01 , 2SK2367 .
History: IRFS650A
Keywords - 2SK266 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFS650A
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