2SK266 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK266
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 15 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.0006 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 650 Ohm
Тип корпуса: YSTM
2SK266 Datasheet (PDF)
3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf
www.DataSheet4U.com
2sk2661.pdf
2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) 2SK2661 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancementmode : Vth = 2
2sk2662.pdf
2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.35 (typ.) (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
2sk2660.pdf
Power F-MOS FETs 2SK7582SK2660(Tentative)Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1 High-speed switching5.3 0.14.35 0.1 High drain-source voltage (VDSS)3.0 0.1 Applications High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)1 : Gate1 2 32 : DrainParameter Symbol Ratin
2sk2666.pdf
SHINDENGEN N- NEDI MENSI ONSOUTLI2SK2666Case : FTO-220Unit:mmF3F90HVX900V 3A(Ciss)
2sk2663.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2663Case : E-pack( F1E90HVX2 )(Unit : mm)900V 1AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 240V inputHi
2sk2667.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2667Case : MTO-3P(Unit : mm)( F3W90HVX2 )900V 3AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC
2sk2665 f3s90hvx2.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2665Case : STO-220(Unit : mm)( F3S90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
2sk2664 f3v90hvx2.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2664Case : TO-220(Unit : mm)( F3V90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
2sk2669.pdf
SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2669Case : TO-220(Unit : mm)( F5V90HVX2 )900V 5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK2462
History: 2SK2462
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918