DMZ6012E Todos los transistores

 

DMZ6012E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMZ6012E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.5 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 120 Ohm

Empaquetado / Estuche: SOT23

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DMZ6012E Datasheet (PDF)

1.1. dmz6012e.pdf Size:206K _ark-micro

DMZ6012E
DMZ6012E

DMZ6012E Depletion-Mode Power MOSFET General Features  ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min  Depletion Mode (Normally On)  Proprietary Advanced Planar Technology 600V 120 Ω 100mA  Rugged Polysilicon Gate Cell Structure  Fast Switching Speed  RoHS Compliant  Halogen-free available Applications  Normally-on Switches  SMPS St

5.1. dmz6005e.pdf Size:222K _ark-micro

DMZ6012E
DMZ6012E

DMZ6005E Depletion-Mode Power MOSFET General Features  ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min  Depletion Mode (Normally On)  Proprietary Advanced Planar Technology 600V 700 Ω 5mA  Rugged PolysiliconGate Cell Structure  Fast Switching Speed  RoHS Compliant SOT-23  Halogen-free available D Drain Source Applications G  Normally-o

5.2. dmz6005e.pdf Size:1120K _kexin

DMZ6012E
DMZ6012E

SMD Type MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) = 600V ● ID = 20mA ● RDS(ON) < 700mΩ (VGS = 0 V) 1 2 +0.1 +0.05 0.95 -0.1 ● Fast Switching Speed 0.1 -0.01 +0.1 1.9 -0.1 ● RoHS Compliant ● Halogen-free available 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃

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