DMZ6012E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMZ6012E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 120 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de DMZ6012E MOSFET
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DMZ6012E datasheet
dmz6012e.pdf
DMZ6012E Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 120 100mA Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Normally-on Switches SMPS St
dmz6005e.pdf
DMZ6005E Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 700 5mA Rugged PolysiliconGate Cell Structure Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Drain Source Applications G Normally-o
dmz6005e.pdf
SMD Type MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 600V ID = 20mA RDS(ON) 700m (VGS = 0 V) 1 2 +0.1 +0.05 0.95 -0.1 Fast Switching Speed 0.1 -0.01 +0.1 1.9 -0.1 RoHS Compliant Halogen-free available 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25
Otros transistores... FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E , 2N60 , FTE08N06G , FTE11N06G , FTF16N06G , FTP04N60A , FTA04N60A , FTP04N60B , FTA04N60B , FTP07N60 .
History: BUK462-100A
History: BUK462-100A
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