All MOSFET. DMZ6012E Datasheet

 

DMZ6012E MOSFET. Datasheet pdf. Equivalent

Type Designator: DMZ6012E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.1 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 120 Ohm

Package: SOT23

DMZ6012E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMZ6012E Datasheet (PDF)

0.1. dmz6012e.pdf Size:206K _ark-micro

DMZ6012E
DMZ6012E

DMZ6012E Depletion-Mode Power MOSFET General Features  ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min  Depletion Mode (Normally On)  Proprietary Advanced Planar Technology 600V 120 Ω 100mA  Rugged Polysilicon Gate Cell Structure  Fast Switching Speed  RoHS Compliant  Halogen-free available Applications  Normally-on Switches  SMPS St

9.1. dmz6005e.pdf Size:222K _ark-micro

DMZ6012E
DMZ6012E

DMZ6005E Depletion-Mode Power MOSFET General Features  ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min  Depletion Mode (Normally On)  Proprietary Advanced Planar Technology 600V 700 Ω 5mA  Rugged PolysiliconGate Cell Structure  Fast Switching Speed  RoHS Compliant SOT-23  Halogen-free available D Drain Source Applications G  Normally-o

9.2. dmz6005e.pdf Size:1120K _kexin

DMZ6012E
DMZ6012E

SMD Type MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 ■ Features 3 ● VDS (V) = 600V ● ID = 20mA ● RDS(ON) < 700mΩ (VGS = 0 V) 1 2 +0.1 +0.05 0.95 -0.1 ● Fast Switching Speed 0.1 -0.01 +0.1 1.9 -0.1 ● RoHS Compliant ● Halogen-free available 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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