DMZ6012E Datasheet and Replacement
Type Designator: DMZ6012E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 120 Ohm
Package: SOT23
DMZ6012E substitution
DMZ6012E Datasheet (PDF)
dmz6012e.pdf

DMZ6012EDepletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 120 100mA Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Normally-on Switches SMPS St
dmz6005e.pdf

DMZ6005EDepletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 700 5mA Rugged PolysiliconGate Cell Structure Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available DDrainSourceApplications G Normally-o
dmz6005e.pdf

SMD Type MOSFETN-Channel MOSFETDMZ6005E (KMZ6005E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 600V ID = 20mA RDS(ON) 700m (VGS = 0 V)1 2+0.1+0.050.95 -0.1 Fast Switching Speed 0.1 -0.01+0.11.9 -0.1 RoHS Compliant Halogen-free available1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25
Datasheet: FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E , IRF830 , FTE08N06G , FTE11N06G , FTF16N06G , FTP04N60A , FTA04N60A , FTP04N60B , FTA04N60B , FTP07N60 .
History: SVF830T | SFB096N200C3 | RJK0223DNS | AM110N06-08P | 2SJ485 | NP90N04VLG | IRC740PBF
Keywords - DMZ6012E MOSFET datasheet
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History: SVF830T | SFB096N200C3 | RJK0223DNS | AM110N06-08P | 2SJ485 | NP90N04VLG | IRC740PBF



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