2SK2012 Todos los transistores

 ..1. Size:40K  sanyo
 2sk2012.pdf

Ordering number ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2012] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

 8.1. Size:221K  toshiba
 2sk2013.pdf

 8.2. Size:90K  sanyo
 2sk2010.pdf

Ordering number ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2010] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

 8.3. Size:113K  sanyo
 2sk2011.pdf

Ordering number EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2011] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

 8.4. Size:23K  panasonic
 2sk2014.pdf

Power F-MOS FETs 2SK758 2SK2014 Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.7 (typ) 5.3 0.1 4.35 0.1 No secondary breakdown 3.0 0.1 Low-voltage drive possible(VGS= 4V) Taping supply possible Applications DC-DC converter 1.0 0.1 Non-contact relay 0.85 0.1 0.75 0.1 0.5 0.1 Solenoid drive 4.6 0.1 0.05

 8.5. Size:33K  panasonic
 2sk2015.pdf

Power F-MOS FETs 2SK2015 2SK2015 Silicon N-Channel Power F-MOS Unit mm 6.5 0.1 Features 5.3 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.7 (typ) 4.35 0.1 3.0 0.1 High-speed switching tf= 36ns(typ) No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact relay

 8.6. Size:33K  panasonic
 2sk2016.pdf

Power F-MOS FETs 2SK2016 2SK2016 Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.315 (typ) 5.3 0.1 4.35 0.1 High-speed switching tf= 38ns(typ) 3.0 0.1 No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact rel

 8.7. Size:195K  fuji
 2sk2018.pdf

N-channel MOS-FET 2SK2018-01L,S FAP-III Series 60V 0,1 10A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Max

 8.8. Size:207K  fuji
 2sk2019-01.pdf

N-channel MOS-FET 2SK2019-01 FAP-IIA Series 500V 3 3,5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

 8.9. Size:217K  inchange semiconductor
 2sk2019-01.pdf

isc N-Channel MOSFET Transistor 2SK2019-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.10. Size:217K  inchange semiconductor
 2sk2010.pdf

isc N-Channel MOSFET Transistor 2SK2010 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr