2SK2012 - Даташиты. Аналоги. Основные параметры

Ordering number:ENN4321BN-Channel Silicon MOSFET2SK2012Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2012] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 180V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SJ313 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 180 VGate-source voltage VGSS

Ordering number:ENN4319N-Channel Silicon MOSFET2SK2010Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2010] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Ordering number:EN4320AN-Channel Silicon MOSFET2SK2011Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2011] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

Power F-MOS FETs 2SK7582SK2014Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1Low ON-resistance RDS(on) : RDS(on)1= 0.7 (typ)5.3 0.1 4.35 0.1No secondary breakdown3.0 0.1Low-voltage drive possible(VGS= 4V)Taping supply possible ApplicationsDC-DC converter 1.0 0.1Non-contact relay0.85 0.1 0.75 0.1 0.5 0.1Solenoid drive4.6 0.1 0.05

Power F-MOS FETs 2SK20152SK2015Silicon N-Channel Power F-MOSUnit : mm6.5 0.1 Features5.3 0.1Low ON-resistance RDS(on) : RDS(on)1= 0.7(typ)4.35 0.13.0 0.1High-speed switching : tf= 36ns(typ)No secondary breakdownFor low-voltage drive(VGS= 4V)Taping supply possible Applications1.0 0.1DC-DC converter0.85 0.1 0.75 0.1 0.5 0.1Non-contact relay

Power F-MOS FETs 2SK20162SK2016Silicon N-Channel Power F-MOSUnit : mm Features6.5 0.1Low ON-resistance RDS(on) : RDS(on)1= 0.315(typ)5.3 0.1 4.35 0.1High-speed switching : tf= 38ns(typ)3.0 0.1No secondary breakdownFor low-voltage drive(VGS= 4V)Taping supply possible Applications 1.0 0.1DC-DC converter0.85 0.1 0.75 0.1 0.5 0.1Non-contact rel

N-channel MOS-FET2SK2018-01L,SFAP-III Series 60V 0,1 10A 20W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance- Avalanche Proof> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Max

N-channel MOS-FET2SK2019-01FAP-IIA Series 500V 3 3,5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

isc N-Channel MOSFET Transistor 2SK2019-01DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor 2SK2010DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr