2SK2012 Specs and Replacement
Type Designator: 2SK2012
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ -
Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220ML
- MOSFET ⓘ Cross-Reference Search
2SK2012 datasheet
..1. Size:40K sanyo
2sk2012.pdf 
Ordering number ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2012] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
8.2. Size:90K sanyo
2sk2010.pdf
Ordering number ENN4319 N-Channel Silicon MOSFET 2SK2010 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2010] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
8.3. Size:113K sanyo
2sk2011.pdf
Ordering number EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK2011] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO ... See More ⇒
8.4. Size:23K panasonic
2sk2014.pdf
Power F-MOS FETs 2SK758 2SK2014 Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.7 (typ) 5.3 0.1 4.35 0.1 No secondary breakdown 3.0 0.1 Low-voltage drive possible(VGS= 4V) Taping supply possible Applications DC-DC converter 1.0 0.1 Non-contact relay 0.85 0.1 0.75 0.1 0.5 0.1 Solenoid drive 4.6 0.1 0.05 ... See More ⇒
8.5. Size:33K panasonic
2sk2015.pdf
Power F-MOS FETs 2SK2015 2SK2015 Silicon N-Channel Power F-MOS Unit mm 6.5 0.1 Features 5.3 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.7 (typ) 4.35 0.1 3.0 0.1 High-speed switching tf= 36ns(typ) No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact relay ... See More ⇒
8.6. Size:33K panasonic
2sk2016.pdf
Power F-MOS FETs 2SK2016 2SK2016 Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 Low ON-resistance RDS(on) RDS(on)1= 0.315 (typ) 5.3 0.1 4.35 0.1 High-speed switching tf= 38ns(typ) 3.0 0.1 No secondary breakdown For low-voltage drive(VGS= 4V) Taping supply possible Applications 1.0 0.1 DC-DC converter 0.85 0.1 0.75 0.1 0.5 0.1 Non-contact rel... See More ⇒
8.7. Size:195K fuji
2sk2018.pdf
N-channel MOS-FET 2SK2018-01L,S FAP-III Series 60V 0,1 10A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Max... See More ⇒
8.8. Size:207K fuji
2sk2019-01.pdf
N-channel MOS-FET 2SK2019-01 FAP-IIA Series 500V 3 3,5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva... See More ⇒
8.9. Size:217K inchange semiconductor
2sk2019-01.pdf
isc N-Channel MOSFET Transistor 2SK2019-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
8.10. Size:217K inchange semiconductor
2sk2010.pdf
isc N-Channel MOSFET Transistor 2SK2010 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr... See More ⇒
Detailed specifications: BSN304, J309G, J310G, SSF5508, SSF7509, 2SK1078, 2SK2018-01L, 2SK2018-01S, AO3400, 2SK2623, 2SK3508-01MR, 2SK4200LS, 2SK3354, 2SK3354S, 2SK3354Z, 2SK2675, 2SK596
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
