2SK596 Todos los transistores

 

2SK596 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK596

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.001 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 700 Ohm

Encapsulados: TO92

 Búsqueda de reemplazo de 2SK596 MOSFET

- Selecciónⓘ de transistores por parámetros

 

2SK596 datasheet

 ..1. Size:85K  blue-rocket-elect
2sk596.pdf pdf_icon

2SK596

2SK596 N-CHANNEL Junction FET/N Purpose Especially suited for use in audio,telephone capacitor microphones. Features Excellent voltage characteristic,excellent transient characteristic. /Absolute maximum ratings(Ta=25 )

 0.1. Size:313K  sanyo
2sk596s.pdf pdf_icon

2SK596

2SK596S Ordering number ENA0944 SANYO Semiconductors DATA SHEET N-channel Silicon Juncton FET Electret Condenser Microphone 2SK596S Applications Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic

 0.2. Size:240K  onsemi
2sk596s-b.pdf pdf_icon

2SK596

Ordering number ENA0944 2SK596S N-Channel JFET http //onsemi.com 20V, 140 to 350 A, 1.0mS, SPA Features Low output noise voltage VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET process Specifications Absolut

 9.1. Size:2898K  1
2sk591.pdf pdf_icon

2SK596

Otros transistores... 2SK2012 , 2SK2623 , 2SK3508-01MR , 2SK4200LS , 2SK3354 , 2SK3354S , 2SK3354Z , 2SK2675 , 8205A , BR100N03 , BR12N60 , BR1N60 , BR2N60 , BR4145 , BR4953 , BR4N60 , BR50N06 .

 

 

 

 

↑ Back to Top
.