2SK596 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK596
Тип транзистора: JFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.001 A
Tjⓘ - Максимальная температура канала: 125 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 700 Ohm
Тип корпуса: TO92
2SK596 Datasheet (PDF)
2sk596.pdf
2SK596 N-CHANNEL Junction FET/N Purpose: Especially suited for use in audio,telephone capacitor microphones. Features:Excellent voltage characteristic,excellent transient characteristic. /Absolute maximum ratings(Ta=25)
2sk596s.pdf
2SK596SOrdering number : ENA0944SANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser Microphone2SK596SApplicationsFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic
2sk596s-b.pdf
Ordering number : ENA09442SK596SN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, SPAFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET processSpecificationsAbsolut
2sk591.pdf
2sk17 2sk40 2sk59 2sk105 ifn17 ifn40 ifn59 ifn105.pdf
Databook.fxp 1/14/99 2:03 PM Page D-2D-2 01/99Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK17 2SK40 2SK59 2SK105JapaneseIFN17 IFN40 IFN59 IFN105InterFETNJ16 NJ16 NJ16 NJ16ProcessUnit N N N NParameters Conditions Limit Channel Channel Channel ChannelVBVGSS IG = 1.0 A 20 50 30 50MinnA 0.10 1.0 1.0 1.0IGSS VGS = ( )
2sk591.pdf
isc N-Channel MOSFET Transistor 2SK591FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 0.055(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
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