2SK596 Datasheet and Replacement
Type Designator: 2SK596
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.001 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: TO92
2SK596 substitution
2SK596 Datasheet (PDF)
2sk596.pdf

2SK596 N-CHANNEL Junction FET/N Purpose: Especially suited for use in audio,telephone capacitor microphones. Features:Excellent voltage characteristic,excellent transient characteristic. /Absolute maximum ratings(Ta=25)
2sk596s.pdf

2SK596SOrdering number : ENA0944SANYO SemiconductorsDATA SHEETN-channel Silicon Juncton FETElectret Condenser Microphone2SK596SApplicationsFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic
2sk596s-b.pdf

Ordering number : ENA09442SK596SN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.0mS, SPAFeatures Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1k , Cin=15pF, VIN=0V, A curve) Especiallysuited for use in condenser microphone for audio equipments and telephones Excellent transient characteristic Adoption of FBET processSpecificationsAbsolut
Datasheet: 2SK2012 , 2SK2623 , 2SK3508-01MR , 2SK4200LS , 2SK3354 , 2SK3354S , 2SK3354Z , 2SK2675 , IRF630 , BR100N03 , BR12N60 , BR1N60 , BR2N60 , BR4145 , BR4953 , BR4N60 , BR50N06 .
Keywords - 2SK596 MOSFET datasheet
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